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2SA1389 Datasheet - NJSEMI

Part Name
Description
MFG CO.
2SA1389
NJSEMI
New Jersey Semiconductor NJSEMI
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2SA1389 image

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   V(BR)CEO=-160V(Min)
• High Speed Switching
• Wide Area of Safe Operation

APPLICATIONS
• High frequency power amplifiers
• Audio power amplifiers
• Switching regulators
• DC-DC converters

 

Part Name
Description
PDF
MFG CO.
Silicon PNP Power Transistor
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Silicon PNP Power Transistor
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Silicon PNP Power Transistor
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Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
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