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AP9930GM-HF Datasheet - DOINGTER

Part Name
Description
MFG CO.
AP9930GM-HF
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
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Description:
This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON), low gate charge. This device may be usedto form a level shifted highside switch, and for a host ofother application.

Features:
1) N-Channel:V DS=30V,ID= 6A,RDS(ON)<32mΩ @VGS=10V
   P-Channel:VDS=-30V,ID=-6A,RDS(ON)<65mΩ @VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

Part Name
Description
PDF
MFG CO.
N-Channel and P-Channel MOSFET use advanced trench Technology
Unspecified
N-Channel and P-Channel MOSFET use advanced trench Technology
Unspecified
N-Channel and P-Channel MOSFET use advanced trench Technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
Unspecified

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