Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Home >>> DOINGTER >>> AP9965GEM Datasheet

AP9965GEM Datasheet - DOINGTER

Part Name
Description
MFG CO.
AP9965GEM
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
Other PDF
  not available.
PDF
DOWNLOAD     
AP9965GEM image

Description:
This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=40V,ID=7A,RDS(ON)<32mΩ @VGS=4.5V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

Part Name
Description
PDF
MFG CO.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified

Share Link: 

All Rights Reserved© datasheetq.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]