NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.
• High power gain
• High efficiency
• Low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance
• Linear and non-linear operation.
• RF front end with high linearity system demands (CDMA)
• Common emitter class AB driver.