Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing common mode inductance
• Designed for broadband operation (HF to 1 GHz).
• Communication transmitter applications in the UHF frequency range.