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BLF6G21-10G Datasheet - NXP

Part Name
Description
MFG CO.
BLF6G21-10G
NXP
NXP Semiconductors. NXP
Other PDF
  2009  
PDF
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General description
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz

Features and benefits
■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
   a supply voltage of 28 V and an IDq of 100 mA:
   ◆ Average output power = 0.7 W
   ◆ Gain = 18.5 dB
   ◆ Efficiency = 15 %
   ◆ ACPR = 50 dBc
■ Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
   a supply voltage of 28 V and an IDq of 100 mA:
   ◆ Average output power = 2 W
   ◆ Gain = 19.3 dB
   ◆ Efficiency = 31 %
   ◆ ACPR = 39 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ No internal matching for broadband operation
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and
   multi carrier applications in the HF to 2200 MHz frequency range
■ Broadcast drivers

 

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PDF
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