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BRG10N120D Datasheet - FOSHAN

Part Name
Description
MFG CO.
BRG10N120D
FOSHAN
Foshan Blue Rocket Electronics Co.,Ltd. FOSHAN
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Descriptions
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Features
   Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation voltage.

Applications
   Eddy-current heating.

 

Part Name
Description
PDF
MFG CO.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
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Foshan Blue Rocket Electronics Co.,Ltd.

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