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CPD91V Datasheet - Central-Semiconductor

Part Name
Description
MFG CO.
Other PDF
  2006  
PDF
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CPD91V image

PROCESS DETAILS
   Process EPITAXIAL PLANAR
   Die Size 11 x 11 MILS
   Die Thickness 7.1 MILS
   Anode Bonding Pad Area 3.35 x 3.35 MILS
   Top Side Metalization Al - 15,000Å
   Back Side Metalization Au-As - 12,000Å

 

Part Name
Description
PDF
MFG CO.
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
Knox Semiconductor, Inc
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE
Knox Semiconductor, Inc
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE
Knox Semiconductor, Inc
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
Knox Semiconductor, Inc
Single low leakage current switching diode
NXP Semiconductors.
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE
PANJIT INTERNATIONAL
SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE
PANJIT INTERNATIONAL
HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE
STMicroelectronics
Low leakage switching diode
NXP Semiconductors.
LOW LEAKAGE SWITCHING DIODE
Semtech Electronics LTD.

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