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FQD2N60C Datasheet - VBSEMI

Part Name
Description
MFG CO.
FQD2N60C
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
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FQD2N60C image

FEATURES
• Low Gate Charge Qg Results in Simple Drive
   Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
   Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
   and Current
• Compliant to RoHS directive 2002/95/EC

 

Part Name
Description
PDF
MFG CO.
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd

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