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IXFN230N10 Datasheet - IXYS

Part Name
Description
MFG CO.
IXFN230N10
IXYS
IXYS CORPORATION IXYS
Other PDF
  1998  
PDF
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IXFN230N10 image

Power MOSFET Single Die MOSFET

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr

Features
• International standard package
• miniBLOC, with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche rated
• Guaranteed FBSOA
• Low package inductance
• Fast intrinsic Rectifier

Advantages
• Easy to mount
• Space savings
• High power density

Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

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