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IXTH11N80 Datasheet - IXYS

Part Name
Description
MFG CO.
IXTH11N80
IXYS
IXYS CORPORATION IXYS
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N-Channel Enhancement Mode

Features
● International standard packages
● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Low package inductance (< 5 nH)
    - easy to drive and to protect
● Fast switching times

Applications
● Switch-mode and resonant-mode power supplies
● Motor controls
● Uninterruptible Power Supplies (UPS)
● DC choppers

Advantages
● Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
● Space savings
● High power density

Page Link's: 1  2  3  4 
 

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PDF
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GaAs FET ( Rev : 2000 )
Infineon Technologies
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