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L125 Datasheet - Polyfet-RF

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Description
MFG CO.
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15.0 Watts Single Ended Package Style SO8-1
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

General Description
Silicon VDMOS and LDMOS
transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.

 

 

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