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LC801 Datasheet - Polyfet-RF

Part Name
Description
MFG CO.
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General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
20.0 Watts Single Ended
Package Style AC

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
ROHS COMPLIANT

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Description
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MFG CO.
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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices

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