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LP722 Datasheet - Polyfet-RF

Part Name
Description
MFG CO.
Other PDF
  2001  
PDF
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LP722 image

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

35.0 Watts Single Ended
Package Style AP

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT

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