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MMG3010NT1 Datasheet - NXP

Part Name
Description
MFG CO.
MMG3010NT1
NXP
NXP Semiconductors. NXP
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0-6000 MHz, 15 dB 17 dBm InGaP HBT

The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS , BWA , WLL , PHS , CATV, VHF, UHF, UMTS and general
small-signal RF.

Features
• Frequency: 0 to 6000 MHz
• P1dB: 17 dBm @ 900 MHz
• Small-Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 31 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

 

Part Name
Description
PDF
MFG CO.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Motorola => Freescale
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor

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