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MMG3015NT1 Datasheet - Freescale

Part Name
Description
MFG CO.
Other PDF
  2008  
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MMG3015NT1 image

0--6000 MHz, 15.5 dB 20.5 dBm InGaP HBT

The MMG3015NT1 is a general purpose amplifier that is internally input and output matched. It is des igned for a broad range of C lass A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

Features
• Frequency: 0--6000 MHz
• P1dB: 20.5 dBm @ 900 MHz
• Small Signal Gain: 15.5 dB @ 900 MHz
• Third Order Output Intercept Point: 36 dBm @ 900 MHz
• Single 5 Volt Supply
• Active Bias Control
• Internally Matched to 50 Ohms
• Cost--effective SOT--89 Surface Mount Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

 

Part Name
Description
PDF
MFG CO.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Motorola => Freescale
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.

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