NPN SILICON ANNULAR TRANSISTORS

. . . designed for use in general-purpose amplifier applications.

• Collector Emitter Breakdown Voltage -
   BVCEO = 45 Vdc (Min) @ Ic = 10 mAdc
• High Current-Gain—Bandwidth Product -
   fT = 500 MHz (Typ) @ Ic = 10 mAdc
• Low Output Capacitance —
   Cob = 2.2pF (Typ) @ VCB= 10 Vdc