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MRF5P21180HR6 Datasheet - Freescale

Part Name
Description
MFG CO.
MRF5P21180HR6
Freescale
Freescale Semiconductor Freescale
Other PDF
  2006  
PDF
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2110--2170 MHz, 38 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFET

Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications.

• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 38 Watts Avg., Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
   Power Gain — 14 dB
   Drain Efficiency — 25.5%
   IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
   ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW Output Power

Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

 

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