The NE72218 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance, reliability and uniformity. The NE72218 is housed in a 4 pin super mini mold package, making it ideal for high density design.
• HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz
• LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz
• GATE LENGTH: LG = 0.8 µm (recessed gate)
• GATE WIDTH: WG = 400 µm
• 4 PIN SUPER MINI MOLD: (SOT-343)
• TAPE & REEL PACKAGING