Part Name
Description
PDF
MFG CO.
φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
California Eastern Laboratories.
ø 80 μm InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
California Eastern Laboratories.
ø 30 μm InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
California Eastern Laboratories.
MITSUBISHI PHOTO DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES
MITSUBISHI ELECTRIC
InGaAs/InP PIN Photo Diode
Microsemi Corporation
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE MODULE
California Eastern Laboratories.
InGaAs APD PREAMP MODULE FOR THE 1.31 m AND 1.55 m WAVELENGTH RANGE
Mitsumi
InGaAs APD PREAMP MODULE FOR THE 1.31 m AND 1.55 m WAVELENGTH RANGE
MITSUBISHI ELECTRIC
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS φ50 µm InGaAs AVALANCHE PHOTO DIODE MODULE
California Eastern Laboratories.
MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES
MITSUBISHI ELECTRIC