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PBSS5350D Datasheet - NXP

Part Name
Description
MFG CO.
PBSS5350D
NXP
NXP Semiconductors. NXP
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General description
150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Features and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Designed for broadband operation (2500 MHz to 2700 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to
   2700 MHz frequency range

 

Part Name
Description
PDF
MFG CO.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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UHF power LDMOS transistor
Philips Electronics
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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35 Watt, silicon gate enhancement mode RF power LDMOS transistor
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