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STFW3N170 Datasheet - ST-Microelectronics

Part Name
Description
MFG CO.
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STFW3N170 image

Description
This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Features
• Intrinsic capacitances and Qg minimized
• TO-3PF for higher creepage between leads
• High speed switching
• 100% avalanche tested

Applications
• Switching applications

 

Part Name
Description
PDF
MFG CO.
N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-3PF package
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N-channel 1050 V, 6 Ω typ., 1.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a TO-3PF package
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N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package
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N-channel 600 V, 165 mΩ typ., 18 A, MDmesh DM6 Power MOSFET in a TO‑220 package
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N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET in TO-3PF and TO-247 packages
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N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 165 mΩ typ., 18 A, MDmesh DM6 Power MOSFET in a TO‑220FP package
STMicroelectronics
N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220FP package
STMicroelectronics

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