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California Eastern Laboratories.
California Eastern Laboratories.
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
NEC => Renesas Technology
NEC => Renesas Technology
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
California Eastern Laboratories.
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
California Eastern Laboratories.
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE (Rev - 2006)
NEC => Renesas Technology
NEC => Renesas Technology
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
California Eastern Laboratories.
Description : NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS (Rev - V2)
NEC => Renesas Technology
NEC => Renesas Technology
Description : NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
California Eastern Laboratories.
California Eastern Laboratories.
Description : NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
California Eastern Laboratories.
California Eastern Laboratories.
Description : NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS
California Eastern Laboratories.
California Eastern Laboratories.
Description : NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
Part Name(s) : NX6309GH NX6309GH-AZ
California Eastern Laboratories.
California Eastern Laboratories.
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Renesas Electronics
Renesas Electronics
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Part Name(s) : NX6309GH
Renesas Electronics
Renesas Electronics
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Part Name(s) : NX6308GH NX6308GH-AZ
California Eastern Laboratories.
California Eastern Laboratories.
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Description : PCS and WLAN Omni Antennas
Description : NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
Description : NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories.
California Eastern Laboratories.
Description : NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories.
California Eastern Laboratories.
Description : NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
Renesas Electronics
Renesas Electronics
Description : 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
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