1M X 4 DRAM DYNAMIC RANDOMACCESS MEMORY Datasheet PDF

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Part Name(s) : SMJ44400 SMJ44400-10 SMJ44400-12 SMJ44400-80 SMJ44400HR SMJ44400JD SMJ44400-80JD SMJ44400-80JDM SMJ44400-80HR SMJ44400-80HRM

Austin Semiconductor

Description : 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY

Part Name(s) : NTE-DRAM

NTE Electronics

Description : MICROPROCESSOR & MEMORY CIRCUITS

Part Name(s) : MCM14552 MCM14552AL MCM14552AP MCM14552CL MCM14552CP

Motorola => Freescale

Description : 256-BIT STATIC RANDOMACCESS MEMORY

Part Name(s) : NTE21256

NTE Electronics

Description : 262,144–Bit DYNAMIC Random Access MEMORY (DRAM)

Part Name(s) : Q67100-Q1072 Q67100-Q1073 HYB5118160BSJ-50 HYB5118160BSJ-60

Infineon Technologies

Description : 1M × 16 DRAM

Part Name(s) : MCM40100 MCM40100S10 MCM40100S80 MCM40100SG10 MCM40100SG80 MCM40L100 MCM40L100S10 MCM40L100S80 MCM40L100SG10 MCM40L100SG80

Motorola => Freescale

Description : 1M x 40 Bit DYNAMIC Random Access MEMORY Module

Part Name(s) : MCM32100 MCM32100S10 MCM32100SG10 MCM32L100S10 MCM32L100SG10 MCM32100S80 MCM32100SG80 MCM32L100 MCM32L100S80 MCM32L100SG80

Motorola => Freescale

Description : 1M x 32 Bit DYNAMIC Random Access MEMORY Module

Part Name(s) : HY62256A HY62256A-(I) HY62256A-I HY62256AP HY62256ALP HY62256ALLP HY62256AJ HY62256ALJ HY62256ALLJ HY62256AT1

Unspecified

Description : DRAM & SRAM MEMORY

Part Name(s) : HY51V18163HG HY51V18163HGJ HY51V18163HGJ-5 HY51V18163HGJ-6 HY51V18163HGJ-7 HY51V18163HGL HY51V18163HGL-5 HY51V18163HGL-6 HY51V18163HGL-7 HY51V18163HGLJ-5

Hynix Semiconductor

Description : 1M x 16Bit EDO DRAM

Part Name(s) : HY51V18163HG-5 HY51V18163HG-6 HY51V18163HG-7 HY51VS18163HG-5 HY51VS18163HG-6 HY51VS18163HG-7

Hynix Semiconductor

Description : 1M x 16Bit EDO DRAM

Part Name(s) : PLM101-1M

NEC => Renesas Technology

Description : PLASTIC FIBER OPTIC LINK

Part Name(s) : AS4C1M16E5-45JC AS4C1M16E5-45TC AS4C1M16E5-50JC AS4C1M16E5-50JI AS4C1M16E5-50TC AS4C1M16E5-50TI AS4C1M16E5-60JC AS4C1M16E5-60JI AS4C1M16E5-60TC AS4C1M16E5-60TI

Alliance Semiconductor

Description : 5V 1M×16 CMOS DRAM (EDO)

Part Name(s) : AS4C1M16E5 AS4C1M16E5-45JC AS4C1M16E5-50JC AS4C1M16E5-50JI AS4C1M16E5-60JC AS4C1M16E5-60JI AS4C1M16E5-45TC AS4C1M16E5-50TC AS4C1M16E5-50TI AS4C1M16E5-60TC

Alliance Semiconductor

Description : 5V 1M×16 CMOS DRAM (EDO)

Part Name(s) : AS4LC1M16E5 AS4LC1M16E5-50JC AS4LC1M16E5-50JI AS4LC1M16E5-50TC AS4LC1M16E5-50TI AS4LC1M16E5-60JC AS4LC1M16E5-60JI AS4LC1M16E5-60TC AS4LC1M16E5-60TI

Alliance Semiconductor

Description : 3V 1M×16 CMOS DRAM (EDO)

Part Name(s) : Q67100-Q756 HYB514400BJ-60 HYB514400BJ HYB514400BJ-50- HYB514400BJ-50 Q67100-Q973

Siemens AG

Description : 1M × 4-Bit DYNAMIC RAM

Part Name(s) : NBN15-30GK60-AR-1M

Pepperl+Fuchs Inc.

Description : Inductive sensor

Part Name(s) : AS4LC1M16E5 AS4LC1M16E5-50JC AS4LC1M16E5-50JI AS4LC1M16E5-60JC AS4LC1M16E5-60JI AS4LC1M16E5-50TC AS4LC1M16E5-50TI AS4LC1M16E5-60TC AS4LC1M16E5-60TI

Unspecified

Description : 3V 1M×16 CMOS DRAM (EDO)

Part Name(s) : Q67100-Q2178 HYM64V1005GU-60 HYM72V1005GU HYM64V1005GU-5 HYM72V1005GU-50 Q67100-Q2177 HYM72V1005GU-60 Q67100-Q2176 HYM64V1005GU-50 HYM64V1005GU

Siemens AG

Description : 3.3V 1M × 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module

Part Name(s) : NBB2-F29-E2-1M

Pepperl+Fuchs Inc.

Description : Inductive sensor

Part Name(s) : HYB514400BJL-50

Siemens AG

Description : 1M x 4-Bit DYNAMIC RAM Low Power 1M x 4-Bit DYNAMIC RAM

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