CHARACTERISTICS FOR FPAK TRANSISTORS Datasheet PDF

P/N + Description + Content Search

Part Name(s) : 2SC2730_ 2SC2464 3SK80 3SK82 3SK95 2SC2466 2SC2728 2SC2468 2SC2730 2SC2465

New Jersey Semiconductor

Description : Characteristics for FPAK Transistors

Part Name(s) : SMT100-120 SMT100-140 SMT100-200 SMT100-230 SMT100-270 SMT100-35 SMT100-65 SMT100

Littelfuse, Inc

Description : ELECTRICAL Characteristics

Part Name(s) : SMT50-130 SMT50-120 SMT50-100 SMT50-220 SMT50-200 SMT50-180 SMT50 SMT50-68 SMT50-62 SMT50-270

Littelfuse, Inc

Description : ELECTRICAL Characteristics

Part Name(s) : PESD1863L250

Shanghai Leiditech Electronic Technology Co., Ltd

Description : Electrical Characteristics

Part Name(s) : 1N5728A 1N5728B 1N5728C 1N5728D 1N5729A 1N5729B 1N5729C 1N5729D 1N5730A 1N5730B

New Jersey Semiconductor

Description : ELECTRICAL Characteristics

Part Name(s) : MINISMDC260 MINISMDE190 MINISMDM200F MINISMDM260 MINISMDM260F SMD030 SMD030-2018 SMD050 SMD050-2018 SMD075

Unspecified

Description : Electrical Characteristics for Surface-mount Devices

Part Name(s) : PESD1463L250

Shanghai Leiditech Electronic Technology Co., Ltd

Description : Electrical Characteristics

Part Name(s) : 1ZU03 1ZU05 1ZU075 1ZU1 1ZU1.6 1ZU10 1ZU12 1ZU125 1ZU13 1ZU15

Unspecified

Description : Z-TRIP Characteristics

Part Name(s) : 1N5518 1N5518A 1N5518B 1N5518B-1 1N5518C 1N5518D 1N5519 1N5519A 1N5519B 1N5519B-1

Compensated Devices => Microsemi

Description : LOW REVERSE LEAKAGE Characteristics

Part Name(s) : IS61C256

Integrated Silicon Solution

Description : WRITE CYCLE SWITCHING Characteristics

Part Name(s) : 1N5518 1N5518A 1N5518B 1N5518B-1 1N5518C 1N5518D 1N5519 1N5519A 1N5519B 1N5519B-1

Compensated Devices => Microsemi

Description : LOW REVERSE LEAKAGE Characteristics

Part Name(s) : MC68HC811E2C MC68HC811E2M MC68HC811E2V

Freescale Semiconductor

Description : APPENDIX A ELECTRICAL Characteristics

Part Name(s) : 74HC 74HCT 74HCU

Philips Electronics

Description : FAMILY SPECIFICATIONS HCMOS family Characteristics

Part Name(s) : BYZ35A22 BYZ35A27 BYZ35A33 BYZ35A39 BYZ35A47 BYZ35K22 BYZ35K27 BYZ35K33 BYZ35K39 BYZ35K47

Diotec Semiconductor Germany

Description : Silicon Protectifiers with TVS Characteristics (Rev - 2003)

Part Name(s) : FGL40N150 FGL40N150D FGL40N150DTU GL40N150

Fairchild Semiconductor

Description : Electrical Characteristics of the IGBT

Part Name(s) : 2SD2098 2SD2118 2SD2097 2SD2166

SHIKE Electronics

Description : Excellent DC current gain Characteristics

Part Name(s) : Q65110A1211 Q65110A2653 Q65110A2654 Q65110A2655 SFH3410 SFH3410-1 SFH3410-1/2 SFH3410-2 SFH3410-2/3 SFH3410-3

OSRAM GmbH

Description : Silicon NPN Phototransistor with Vλ Characteristics

Part Name(s) : SFH3310 Q65110A5343

OSRAM GmbH

Description : Silicon NPN Phototransistor with Vλ Characteristics

Part Name(s) : 1MBH15D-060

Fuji Electric

Description : Ratings and Characteristics of Fuji IGBT (Rev - Old_V)

Part Name(s) : 1MBH05D-060

Fuji Electric

Description : Ratings and Characteristics of Fuji IGBT

12 3 4 5 6 7 8 9 10 Next

All Rights Reserved© datasheetq.com [Privacy Policy ] [ Request Datasheet] [Contact Us]