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Part Name(s) : PTFA220121MV4R1KV4XUMA1 PTFA220121M PTFA220121MV4R1K
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Part Name(s) : PTFA220121M-V4-R1K PTFA220121M PTFA220121MV4R1K
Cree, Inc
Description : High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Part Name(s) : PTFA220041MV4R1K PTFA220041M PTFA220041MV4R1KXUMA1
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Part Name(s) : PTFA220121M
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz (Rev - 2010)
Part Name(s) : PTFA220041M
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz (Rev - 2010)
Part Name(s) : PTFA220081M
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz
Part Name(s) : MAPLST0822-002PP
Tyco Electronics
Description : RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V
Part Name(s) : PTFC270101MV1R1KXUMA1 PTFC270101M PTFC270101MV1R1K
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Part Name(s) : PTFB201402FC-V1-R250 PTFB201402FC-V1-R0 PTFB201402FC PTFB201402FCV1R0 PTFB201402FCV1R250
Cree, Inc
Description : High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Part Name(s) : PTFC270101M-V1-R1K PTFC270101M PTFC270101MV1R1K
Cree, Inc
Description : High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Part Name(s) : PTFC270051MV2R1KXUMA1 PTFC270051M PTFC270051MV2R1K
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Part Name(s) : PTFC270101MV1R1KXUMA1 PTFC270101M PTFC270101MV1R1K
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz (Rev - 2015)
Part Name(s) : PXAC243502FVV1R250XTMA1 PXAC243502FVV1R0XTMA1 PXAC243502FV PXAC243502FVV1R0 PXAC243502FVV1R250
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Part Name(s) : PXAC243502FV-V1-R250 PXAC243502FV-V1-R0 PXAC243502FV PXAC243502FVV1R0 PXAC243502FVV1R250
Cree, Inc
Description : High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Part Name(s) : PTFC270051M-V2-R1K PTFC270051M PTFC270051MV2R1K
Cree, Inc
Description : High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Part Name(s) : PXAC243502FVV1R250XTMA1 PXAC243502FV PXAC243502FVV1R250
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz (Rev - 2015)
Part Name(s) : PTFB201402FCV1R250XTMA1 PTFB201402FCV1R0XTMA1 PTFB201402FC PTFB201402FCV1R0 PTFB201402FCV1R250
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Part Name(s) : PTF180101S
Infineon Technologies
Description : LDMOS RF Power Field Effect Transistor (Rev - 2007)
Part Name(s) : PTF180101S PTF180101
Infineon Technologies
Description : LDMOS RF Power Field Effect Transistor
Part Name(s) : PTFB213004FV2R250XTMA1 PTFB213004FV2R0XTMA1 PTFB213004F PTFB213004FV2R0 PTFB213004FV2R250
Infineon Technologies
Description : High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
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