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Part Name(s) : NX6240GP
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE
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Part Name(s) : NX6350GP33-AZ NX6350GP NX6350GP27-AZ NX6350GP29-AZ NX6350GP31-AZ
California Eastern Laboratories.
California Eastern Laboratories.
Description : LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
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Part Name(s) : NX6350GP
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
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Part Name(s) : NX6350EP NX6350EP27-AZ NX6350EP29-AZ NX6350EP31-AZ NX6350EP33-AZ
California Eastern Laboratories.
California Eastern Laboratories.
Description : LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
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Part Name(s) : NX6350EP
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
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Part Name(s) : NX6342EP
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE
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Part Name(s) : NX6352GP
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
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Part Name(s) : NX6240GP NX6240GP-AZ
California Eastern Laboratories.
California Eastern Laboratories.
Description : LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
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Part Name(s) : NX6353EP
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
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Part Name(s) : NX6351GP
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
View
Part Name(s) : NX6352GP NX6352GP27-AZ NX6352GP29-AZ NX6352GP31-AZ NX6352GP33-AZ NX6352GP35-AZ
California Eastern Laboratories.
California Eastern Laboratories.
Description : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
View
Part Name(s) : NX6353EP33-AZ NX6353EP NX6353EP27-AZ NX6353EP29-AZ NX6353EP31-AZ NX6353EP35-AZ
California Eastern Laboratories.
California Eastern Laboratories.
Description : LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
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Part Name(s) : NX8349TS NX8349YK NX8349XK
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
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Part Name(s) : NX8369TS
California Eastern Laboratories.
California Eastern Laboratories.
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
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Part Name(s) : NX8369TS
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
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Part Name(s) : NX8349TB
California Eastern Laboratories.
California Eastern Laboratories.
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
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Part Name(s) : NX8349TS NX8349XK NX8349YK
California Eastern Laboratories.
California Eastern Laboratories.
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
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Part Name(s) : NX8349TS
California Eastern Laboratories.
California Eastern Laboratories.
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION (Rev - 2013)
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Part Name(s) : NX8349TS
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION (Rev - 2013)
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Part Name(s) : NX8346TB NX8346TY
Renesas Electronics
Renesas Electronics
Description : LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
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