P/N + Description + Content Search
Part Name(s) : NESG2046M33 NESG2046M33-A NESG2046M33-T3-A
NEC => Renesas Technology
Description : NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
Part Name(s) : NESG2046M33 NESG2046M33-A NESG2046M33-T3-A
California Eastern Laboratories.
Description : NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
Part Name(s) : NESG210719 NESG210719-T1
NEC => Renesas Technology
Description : NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
Part Name(s) : NESG204619 NESG204619-A NESG204619-T1-A
NEC => Renesas Technology
Description : NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
Part Name(s) : NESG204619 NESG204619-A NESG204619-T1-A
California Eastern Laboratories.
Description : NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
Part Name(s) : 2SC3604 C3604
New Jersey Semiconductor
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Part Name(s) : C3603 2SC3603
eleflow technologies co., ltd.
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Part Name(s) : 2SC3603 C3603
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Part Name(s) : C3604 2SC3604
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Part Name(s) : C3587 2SC3587
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Part Name(s) : NESG2101M05 NESG2101M05-A NESG2101M05-T1 NESG2101M05-T1-A
Renesas Electronics
Description : NPN SiGe RF TRANSISTOR FOR Medium Output Power AMPLIFICATION
Part Name(s) : 2SC5433 2SC5433-T1 C5433-T1 C5433
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Part Name(s) : 2SC5437 2SC5437-T1 C5437 C5437-T1
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Part Name(s) : 2SC5606 2SC5606-A 2SC5606-T1 2SC5606-T1-A C5606 C5606-T1
Renesas Electronics
Description : NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION
Part Name(s) : C3663-T2B C3663-T1B C3663 2SC3663-T2B 2SC3663 2SC3663-T1B
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Part Name(s) : C5434 2SC5434 2SC5434-T1 C5434-T1
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Part Name(s) : 2SC5432-T1 C5432 C5432-T1 2SC5432
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Part Name(s) : NE3210S01 NE3210S01-T1 NE3210S01-T1B
California Eastern Laboratories.
Description : NECs SUPER LOW NOISE HJ FET
Part Name(s) : C3355 2SC3355-T 2SC3355
Renesas Electronics
Description : NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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