PLLFREQUENCY SYNTHESIZER PMB2306R/PMB2306T VERSION 2.2 Datasheet PDF

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Part Name(s) : PMB2306-R PMB2306-T PMB2307 PMB2307-R

Siemens AG

Description : PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2

Part Name(s) : Q67100-H6423 Q67106-H6423 Q-67106-H6514 PMB2306T PMB2306R

Siemens AG

Description : PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2

Part Name(s) : PMB2306T PMB2306R Q67100-H6423 Q67106-H6423 Q-67106-H6514

Infineon Technologies

Description : PLL-Frequency Synthesizer

Part Name(s) : RLDC635-2.2-3

Roithner LaserTechnik GmbH

Description : Main Technical Parameters

Part Name(s) : RLDC650-2.2-3

Roithner LaserTechnik GmbH

Description : Main Technical Parameters

Part Name(s) : RLDC670-2.2-3

Roithner LaserTechnik GmbH

Description : Infrared Diode Laser Module

Part Name(s) : GWPSLMS1.EC GWPSLMS1.EC-GRGT-5R8T-1 GWPSLMS1.EC-GRGT-5U8X-1 GWPSLMS1.EC-GSGU-5L7N-1 GWPSLMS1.EC-GSGU-5R8T-1 GWPSLMS1.EC-GSGU-5U8X-1 GWPSLMS1.EC-GTHP-5C7E-1 GWPSLMS1.EC-GTHP-5F7G-1 GWPSLMS1.EC-GTHP-5H7I-1 GWPSLMS1.EC-GTHP-5L7N-1

Unspecified

Description : DURIS® S 5 Datasheet Version 2.2

Part Name(s) : SA9025

Philips Electronics

Description : 900 MHz transmit modulator and 2.2 GHz fractional–N Synthesizer

Part Name(s) : DTA123EE DTA123EM3 MMUN2131L MUN2131 MUN5131 NSBA123EF3 MMUN2131LT1G NSVMMUN2131LT1G NSVMUN5131T1G DTA123EET1G_16

ON Semiconductor

Description : Digital Transistors (BRT) R1 = 2.2 kΩ, R2 = 2.2 kΩ

Part Name(s) : DTC123EET1G DTC123EM3T5G MMUN2231LT1G MUN2231T1G MUN5231T1G NSBC123EF3T5G NSVDTC123EM3T5G MUN2231 MMUN2231L MUN5231

ON Semiconductor

Description : Digital Transistors (BRT) R1 = 2.2 kΩ, R2 = 2.2 kΩ (Rev - 2015)

Part Name(s) : DTA123EE DTA123EET1G DTA123EM3 DTA123EM3T5G MMUN2131L MMUN2131LT1G MUN2131 MUN2131T1G MUN5131 MUN5131T1G

ON Semiconductor

Description : Digital Transistors (BRT) R1 = 2.2 kΩ, R2 = 2.2 kΩ (Rev - 2015)

Part Name(s) : DTC123EE DTC123EM3 MMUN2231L MUN2231 MUN5231 NSBC123EF3 MUN2231T1G NSVMMUN2231LT1G MUN5231T1G DTC123EET1G

ON Semiconductor

Description : Digital Transistors (BRT) R1 = 2.2 kΩ, R2 = 2.2 kΩ

Part Name(s) : PDTC123EMB

Nexperia B.V. All rights reserved

Description : NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Part Name(s) : DTC123EET1G DTC123EM3T5G MMUN2231LT1G MUN2231T1G MUN5231T1G MUN2231 MMUN2231L MUN5231 DTC123EE DTC123EM3

ON Semiconductor

Description : Digital Transistors (BRT) R1 = 2.2 kΩ, R2 = 2.2 kΩ (Rev - 2012)

Part Name(s) : PDTA123E PDTA123EE PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123ET PDTA123EU

Nexperia B.V. All rights reserved

Description : PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Part Name(s) : PDTC123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123ET PDTC123EU

Philips Electronics

Description : PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Part Name(s) : PDTA123E PDTA123EE PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123ET PDTA123EU

Philips Electronics

Description : PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Part Name(s) : PDTA123ET PDTA123ET,215 PDTA123EU,115 PDTA123EE,115 PDTA123EM,315 PDTA123ES PDTA123EM PDTA123EK PDTA123EEF PDTA123EE

NXP Semiconductors.

Description : PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Part Name(s) : PDTA123EMB

Nexperia B.V. All rights reserved

Description : PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Part Name(s) : PDTC123E PDTC123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123ET PDTC123EU

Nexperia B.V. All rights reserved

Description : NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

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