PMBTA42 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PMBTA42 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN high-voltage transistor
Product specification
PMBTA42
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBEsat
Cre
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
feedback capacitance
transition frequency
IE = 0; VCB = 200 V
IC = 0; VEB = 6 V
VCE = 10 V
IC = 1 mA
IC = 10 mA
IC = 30 mA
IC = 20 mA; IB = 2 mA
IC = 20 mA; IB = 2 mA
IC = ic = 0; VCB = 20 V; f = 1 MHz
IC = 10 mA; VCE = 20 V;
f = 100 MHz
MIN.
−
−
MAX.
100
100
UNIT
nA
nA
25
−
40
−
40
−
−
500
mV
−
900
mV
−
3
pF
50
−
MHz
1999 Apr 22
3
Share Link: 