Philips Semiconductors
NPN/PNP resistor-equipped transistors
Product Specification
PUMD48
103
handbook, halfpage
hFE
102
MDA977
(1) (2)
(3)
10
1
−10−1
−1
−10 IC (mA) −102
TR2 (PNP); VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.7 DC current gain as a function of collector
current; typical values.
−103
handbook, halfpage
VCEsat
(mV)
MDA976
−102
(1)
(3) (2)
−10
−10−1
−1
−10
−102
IC (mA)
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
−104
handbook, halfpage
Vi(off)
(mV)
−103
(1)
(2)
(3)
MDA979
−104
andbook, halfpage
Vi(on)
(mV)
−103
(1)
(2)
(3)
MDA978
−102
−10−2
−10−1
−1
−10
IC (mA)
TR2 (PNP); VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.9 Input-off voltage as a function of collector
current; typical values.
−102
−10−1
−1
−10
−102
IC (mA)
TR2 (PNP); VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.10 Input-on voltage as a function of collector
current; typical values.
1999 Apr 22
6