UPG2110TB(2002) View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
UPG2110TB Datasheet PDF : 12 Pages
| |||
µPG2106TB,µPG2110TB
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD1, 2 = 3.0 V, π/4DQPSK modulated signal input, with external input and output matching,
unless otherwise specified)
µPG2106TB
Parameter
Operating Frequency
Circuit Current
Power Gain
Adjacent Channel Power Leakage 1
Adjacent Channel Power Leakage 2
Gain Control Range
Gain Control Current
Symbol
Test Conditions
fopt
IDD
GP
Padj1
Padj2
GCR
IAGC
Pout = +8 dBm, VAGC = 2.5 V
Pin = −18 dBm, VAGC = 2.5 V
Pout = +8 dBm, VAGC = 2.5 V,
∆f = ±50 kHz, 21 kHz Bandwidth
Pout = +8 dBm, VAGC = 2.5 V,
∆f = ±100 kHz, 21 kHz Bandwidth
Pin = −18 dBm, VAGC = 0.5 to 2.5 V
VAGC = 0.5 to 2.5 V
MIN.
889
−
26
−
TYP.
−
25
30
−60
MAX.
960
35
−
−55
Unit
MHz
mA
dB
dBc
−
−70
−65
dBc
35
40
−
dB
−
200
500
µA
µPG2110TB
Parameter
Operating Frequency
Circuit Current
Power Gain
Adjacent Channel Power Leakage 1
Adjacent Channel Power Leakage 2
Gain Control Range
Gain Control Current
Symbol
Test Conditions
fopt
IDD
GP
Padj1
Pout = +8 dBm, VAGC = 2.5 V
Pin = −18 dBm, VAGC = 2.5 V
Pout = +8 dBm, VAGC = 2.5 V,
∆f = ±50 kHz, 21 kHz Bandwidth
Padj2
GCR
Pout = +8 dBm, VAGC = 2.5 V,
∆f = ±100 kHz, 21 kHz Bandwidth
Pin = −18 dBm, VAGC = 0.5 to 2.5 V
IAGC VAGC = 0.5 to 2.5 V
MIN.
1 429
−
24
−
TYP.
−
25
27
−60
MAX.
1 453
35
−
−55
Unit
MHz
mA
dB
dBc
−
−70
−65
dBc
35
40
−
dB
−
200
500
µA
Data Sheet PG10168EJ01V0DS
3
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