BC878 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BC878 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistor
Product specification
BC878
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
IEBO
hFE
VCEsat
VBEsat
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
VBE = 0; VCE = −60 V
−
−
IC = 0; VEB = −4 V
−
−
IC = −150 mA; VCE = −10 V; see Fig.2 1000 −
IC = −0.5 A; VCE = −10 V; see Fig.2 2000 −
IC = −0.5 A; IB = −0.5 mA
−
−
IC = −1 A; IB = −1 mA
−
−
IC = −1 A; IB = −1 mA
−
−
IC = −0.5 A; VCE = −5 V; f = 100 MHz −
200
Switching times (between 10% and 90% levels)
−50 nA
−50 nA
−
−
−1.3 V
−1.8 V
−2.2 V
−
MHz
ton
turn-on time
toff
turn-off time
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
−
−
500 ns
−
−
700 ns
6000
handbook, full pagewidth
hFE
5000
4000
3000
2000
1000
0
−10−1
VCE = −10 V.
MGD839
−1
−10
−102
IC (mA)
−103
Fig.2 DC current gain; typical values.
1999 May 31
3
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