MUN5111T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5111T1
IEBO
—
MUN5112T1
—
MUN5113T1
—
MUN5114T1
—
MUN5115T1
—
MUN5116T1
—
MUN5130T1
—
MUN5131T1
—
MUN5132T1
—
MUN5133T1
—
MUN5134T1
—
—
100
nAdc
—
500
nAdc
—
0.5
mAdc
—
0.2
—
0.1
—
0.2
—
0.9
—
1.9
—
4.3
—
2.3
—
1.5
—
0.18
—
0.13
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
—
—
Vdc
Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CEO
50
—
—
Vdc
ON CHARACTERISTICS(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5111T1
hFE
MUN5112T1
35
60
—
60
100
—
MUN5113T1
80
140
—
MUN5114T1
80
140
—
MUN5115T1
160
250
—
MUN5116T1
160
250
—
MUN5130T1
3.0
5.0
—
MUN5131T1
8.0
15
—
MUN5132T1
15
27
—
MUN5133T1
80
140
—
MUN5134T1
80
130
—
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
VCE(sat)
—
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
—
0.25
Vdc
Output Voltage (on)
VOL
Vdc
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN5111T1
—
—
0.2
MUN5112T1
—
—
0.2
MUN5114T1
—
—
0.2
MUN5115T1
—
—
0.2
MUN5116T1
—
—
0.2
MUN5130T1
—
—
0.2
MUN5131T1
—
—
0.2
MUN5132T1
—
—
0.2
MUN5133T1
—
—
0.2
MUN5134T1
—
—
0.2
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MUN5113T1
—
—
0.2
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data