2SA928A
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector- Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-2
A
Collector Dissipation
Junction Temperature
Storage Temperature
PC
TJ
TSTG
1
W
+150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collect Cut-off Current
Emitter Cut-off Current
DC Current Ratio
Base-Emitter on Voltage
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
CLASSIFICATION OF hFE
RANK
RANGE
SYMBOL
TEST CONDITIONS
BVCBO IC =-100μA, IE =0
BVCEO IC =-1mA, IB =0
BVEBO IE =-1mA, IC =0
ICBO VCB =-30V, IE =0
IEBO VBE =-5V, IC =0
hFE VCE =-2V, IC =-500mA
VBE(ON) VCE =-2V, IC =-500mA
VCE(SAT) IC =-1.5A, IB =-30mA
COB VCB =-10V, IE =0, f =1MHz
fT VCE =-2V, IC =-500mA
Q
100 ~ 200
MIN TYP MAX UNIT
-30
V
-30
V
-5
V
-100 nA
-100 nA
100
320
-1 V
-2 V
48
pF
120
MHZ
Y
160 ~ 320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-009.D