IRF630NTRL View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRF630NTRL Datasheet PDF : 11 Pages
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IRF630N/S/L
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
200
โโโ
โโโ
2.0
4.9
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
Typ.
โโโ
0.26
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
7.9
14
27
15
4.5
7.5
575
89
25
Max.
โโโ
โโโ
0.30
4.0
โโโ
25
250
100
-100
35
6.5
17
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
Units
V
V/ยฐC
โฆ
V
S
ยตA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA
VGS = 10V, ID = 5.4A ย
VDS = VGS, ID = 250ยตA
VDS = 50V, ID = 5.4A ย
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150ยฐC
VGS = 20V
VGS = -20V
ID = 5.4A
VDS = 160V
VGS = 10V ย
VDD = 100V
ID = 5.4A
RG = 13โฆ
RD = 18โฆ ย
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ฦ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 9.3
A showing the
integral reverse
G
โโโ โโโ 37
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 5.4A, VGS = 0V ย
โโโ 117 176 ns TJ = 25ยฐC, IF = 5.4A
โโโ 542 813 nC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
RฮธJC
RฮธCS
RฮธJA
RฮธJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface ย
Junction-to-Ambientย
Junction-to-Ambient (PCB mount)ย
Typ.
โโโ
0.50
โโโ
โโโ
Max.
1.83
โโโ
62
40
Units
ยฐC/W
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