IRF1302
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID = 104A
10
VDS = 16V
7
5
2
0
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
TJ= 175 ° C
100
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.7
1.2
1.7
2.2
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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