Die Characteristics
DIE DIMENSIONS:
104 mils x 65 mils x 19 mils
2650µm x 1650µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
SUBSTRATE POTENTIAL (POWERED UP):
V-
Metallization Mask Layout
BAL
HA-5147
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
TRANSISTOR COUNT:
63
PROCESS:
Bipolar Dielectric Isolation
HA-5147
BAL
-IN
V+
+IN
OUT
V-
NC
9