2N6388(1999) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
2N6388 Datasheet PDF : 4 Pages
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2N6388
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.92
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEV
Collector Cut-off
VCE = rated VCEO
Current (VBE = -1.5V) VCE = rated VCEO Tc = 125 oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VCE = 80 V
VEB = 5 V
IC = 200 mA
VCER(sus)∗ Collector-Emitter
Sustaining Voltage
IC = 200 mA RBE = 100 Ω
VCEV(sus)∗ Collector-Emitter
Sustaining Voltage
IC = 200 mA VBE = -1.5V
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 5 A
IC = 10 A
IB = 10 mA
IB = 100 mA
VBE∗
Base-Emitter Voltage IC = 5 A
IC = 10 A
VCE = 3 V
VCE = 3 V
hFE∗ DC Current Gain
IC = 5 A
IC = 10 A
VCE = 3 V
VCE = 3 V
hfe
Small Signal Current IC = 1 A VCE = 10 V f = 1MHz
Gain
IC = 1 A VCE = 10 V f = 1KHz
VF∗ Parallel-diode Forward IF = 10 A
Voltage
CCBO
Collector Base
Capacitance
IE = 0 VCB = 10 V
f = 1MHz
Is/b∗∗
Second Breakdown
Collector Current
VCE = 25 V
Es/b Second Breakdown
L = 12 mH
Energy
VBE = -1.5 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗∗ Pulsed: Pulse duration = 100ms non repetitive pulse.
RBE = 100 Ω
IC = 4.5 A
Min.
80
80
80
1000
100
20
1000
2.6
120
Typ.
Max.
0.3
3
1
Unit
mA
mA
mA
5
mA
V
V
V
2
V
3
V
2.8
V
4.5
V
20000
4
V
200 pF
A
mJ
2/4
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