MJL3281A
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Emitter–Base Voltage
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
Emitter Cutoff Current
(VEB = 7 Vdc, IC = 0)
VCEO(sus)
200
—
VEBO
7
—
ICBO
—
—
IEBO
—
—
IEBO
—
—
—
Vdc
—
Vdc
50
µAdc
5
µAdc
25
µAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
IS/b
Adc
4
—
—
1
—
—
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
hFE
60
60
60
60
60
45
12
VCE(sat)
—
125
175
—
175
—
175
—
175
115
175
—
—
35
—
—
3
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.
fT
—
30
—
MHz
Cob
—
—
600
pF
2
Motorola Bipolar Power Transistor Device Data