BC556 View Datasheet(PDF) - General Semiconductor
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Description
Manufacturer
BC556 Datasheet PDF : 6 Pages
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BC556 THRU BC559
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
h-Parameters
at –VCE = 5 V, –IC = 2 mA, f = 1 kHz
Current Gain
Current Gain Group A hfe
B
hfe
C
hfe
Input Impedance
Current Gain Group A hie
B
hie
C
hie
Output Admittance Current Gain Group A hoe
B
hoe
C
hoe
Reverse Voltage Transfer Ratio
Current Gain Group A hre
B
hre
C
hre
–
220
–
–
–
330
–
–
–
600
–
–
1.6
2.7
4.5
kΩ
3.2
4.5
8.5
kΩ
6
8.7
15
kΩ
–
18
30
µS
–
30
60
µS
–
60
110
µS
–
1.5 · 10–4 –
–
–
2 · 10–4
–
–
–
3 · 10–4
–
–
DC Current Gain
at –VCE = 5 V, –IC = 10 µA
Current Gain Group A hFE
B
hFE
C
hFE
at –VCE = 5 V, –IC = 2 mA
Current Gain Group A hFE
B
hFE
C
hFE
at –VCE = 5 V, –IC = 100 mA
Current Gain Group A hFE
B
hFE
C
hFE
–
90
–
–
–
150
–
–
–
270
–
–
110
180
220
–
–
200
290
450
–
420
500
800
–
–
120
–
–
–
200
–
–
–
400
–
Thermal Resistance Junction to Ambient Air
RthJA
–
–
2501)
K/W
Collector Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
–VCEsat
–
–VCEsat
–
80
300
mV
250
650
mV
Base Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
–VBEsat
–
700
–
mV
–VBEsat
–
900
–
mV
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 10 mA
–VBE
600
660
750
mV
–VBE
–
–
800
mV
Collector-Emitter Cutoff Current
at –VCE = 80 V
BC556 –ICES
–
at –VCE = 50 V
BC557 –ICES
–
at –VCE = 30 V
BC558 –ICES
–
at –VCE = 80 V, Tj = 125 °C
BC556 –ICES
–
at –VCE = 50 V, Tj = 125 °C
BC557 –ICES
–
at –VCE = 30 V, Tj = 125 °C BC558, BC559 –ICES
–
0.2
15
nA
0.2
15
nA
0.2
15
nA
–
4
µA
–
4
µA
–
4
µA
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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