QSB363CGR View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
QSB363CGR Datasheet PDF : 6 Pages
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Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. )
Symbol
Parameter
TOPR
TSTG
TSOL
TSOL
VCEO
VECO
PC
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Power Dissipation(1)
Notes
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100µs, T = 10ms.
5. D = 940nm, GaAs.
Rating
-25 to +85
-40 to +85
260
260
30
5
75
Unit
°C
°C
°C
°C
V
V
mW
Electrical/Optical Characteristics (TA = 25°C)
Symbol
Parameters
Test Conditions
λP
Θ
ICEO
BVCEO
BVECO
IC(on)
VCE (SAT)
tr
tf
Peak Sensitivity Wavelength
Reception Angle
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
On-State Collector Current
Collector-Emitter Saturation Voltage
Rise Time
Fall Time
VCE = 20V, Ee = 0mW/cm2
IC = 100µA, Ee = 0mW/cm2
IE = 100µA, Ee = 0mW/cm2
VCE = 5V, Ee = 0.5mW/cm2
IC = 2mA, Ee = 1mW/cm2
VCE = 5 V, IC = 1mA,
RL = 1000Ω
Min.
30
5
1.0
Typ.
940
±12
1.5
15
15
Max. Units
nm
100 nA
V
V
mA
0.4
V
µs
µs
©2011 Fairchild Semiconductor Corporation
QSB363C Rev. 1.0.3
2
www.fairchildsemi.com
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