MMBT4403LT1(2001) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MMBT4403LT1 Datasheet PDF : 8 Pages
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MMBT4403LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)(3)
(IC = –500 mAdc, VCE = –2.0 Vdc)(3)
Collector–Emitter Saturation Voltage(3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
hFE
VCE(sat)
Base–Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
fT
(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz)
Collector–Base Capacitance
Ccb
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance
Ceb
(VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
hie
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
hre
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
hfe
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Output Admittance
hoe
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = –30 Vdc, VEB = –2.0 Vdc,
td
IC = –150 mAdc, IB1 = –15 mAdc)
tr
(VCC = –30 Vdc, IC = –150 mAdc,
ts
IB1 = IB2 = –15 mAdc)
tf
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Min
30
60
100
100
20
—
—
–0.75
—
200
—
—
1.5
0.1
60
1.0
—
—
—
—
Max
Unit
—
—
—
—
300
—
Vdc
–0.4
–0.75
Vdc
–0.95
–1.3
MHz
—
pF
8.5
pF
30
kΩ
15
X 10–4
8.0
—
500
mmhos
100
15
ns
20
225
ns
30
+2 V
0
-ā16 V
SWITCHING TIME EQUIVALENT TEST CIRCUIT
< 2 ns
1.0 kΩ
10 to 100 µs,
DUTY CYCLE = 2%
-ā30 V
200 Ω
< 20 ns
CS* < 10 pF
+14 V
0
-16 V
Scope rise time < 4.0 ns
1.0 kΩ
1.0 to 100 µs,
DUTY CYCLE = 2%
+ā4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
-ā30 V
200 Ω
CS* < 10 pF
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
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