2N3019 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
2N3019 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Product specification
2N3019
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
IE = 0; VCB = 90 V
IE = 0; VCB = 90 V; Tamb = 150 °C
IC = 0; VEB = 5 V
VCE = 10 V; note 1
IC = 0.1 mA
IC = 10 mA
IC = 150 mA
IC = 150 mA; Tcase = −55 °C
IC = 500 mA
IC = 1 A
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA; note 1
IC = 150 mA; IB = 15 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
IC = 50 mA; VCE = 10 V; f = 20 MHz
IC = 0.1 mA; VCE = 5 V; RS = 1 kΩ;
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01.
MIN.
−
−
−
50
90
100
40
50
15
−
−
−
−
−
100
−
MAX.
10
10
10
UNIT
nA
µA
nA
−
−
300
−
−
−
200
mV
500
mV
1.1
V
12
pF
60
pF
−
MHz
4
dB
1997 Jun 19
4
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