BUV50 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BUV50 Datasheet PDF : 5 Pages
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BUV50
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
1.17
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
I CE R
Collector Cut-off
Current (RBE = 10Ω)
VCE = VCEV
VCE = VCEV
Tc = 100oC
ICEV
Collector Cut-off
Cu r re nt
VCE = VCEV VBE = - 1.5V
VCE = VCEV VBE = - 1.5V TC=100 oC
IEBO
Emitter Cut-off
Current (IC = 0)
VEB = 5 V
V CEO(sus )∗
Co lle ct or- Em it t er
Sustaining Voltage
IC = 0.2A
L = 25 mH
VEB0
Em it t er -base
Voltage (Ic = 0)
IE = 50 mA
Co lle ct or- Em it t er
VCE(sat)∗ Saturation Voltage
IC = 10A
IC = 20A
IC = 24A
IC = 10A
IC = 20A
IC = 24A
IB = 0.5A
IB = 2A
IB = 3A
IB = 0.5A
IB = 2A
IB = 3A
Tj = 100oC
Tj = 100 oC
Tj = 100 oC
VBE(s at)∗
Ba se-Em it t er
Saturation Voltage
IC = 20A
IC = 24A
IC = 20A
IC = 24A
IB = 2A
IB = 3A
IB = 2A
IB = 3A
Tj = 100 oC
Tj = 100 oC
dic/ dt∗
Rate of Rise of
on-st ate Collect or
Cu r re nt
VCC = 100V IB1 = 3A
RC =0
Tj = 25oC
Tj = 100oC
VC E(2 µ s )
Co lle ct or- Em it t er
Dynamic Voltage
VCC = 100V IB1 = 2A
RC =5Ω
Tj = 25oC
Tj = 100oC
VC E(4 µ s )
Co lle ct or- Em it t er
Dynamic Voltage
VCC = 100V IB1 = 2A
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 %
RC = 5Ω
Tj = 25oC
Tj = 100oC
Min.
125
7
50
45
Typ .
0.4
0.6
0.7
0.5
0.75
0.9
1.25
1.35
1.25
1.45
100
85
1.4
2.1
1.1
1.5
M a x.
1
5
1
5
1
0.8
0.9
1.2
0.9
1.5
1.8
1.6
1.7
1.7
1.9
3
4
2
2.5
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
A/µs
A/µs
V
V
V
V
2/5
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