1D0N60 View Datasheet(PDF) - KEC
Part Name
Description
Manufacturer
1D0N60 Datasheet PDF : 1 Pages
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 1.0A
Drain-Source ON Resistance :
RDS(ON)=12 @VGS = 10V
Qg(typ.) = 5.9nC
KHB1D0N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
C
K
Q
H
FF
1
2
3
D
I
J
DIM MILLIMETERS
A
6.6 +_ 0.2
B
6.1 +_0.2
C 5.34 +_ 0.3
D
0.7 +_0.2
B
E
2.7 +_ 0.2
F
2.3 +_0.2
E
M
P
H 0.96 MAX
I
2.3 +_ 0.1
J
0.5 +_ 0.1
O
K
1.5
L
0.5 +_ 0.1
M 0.8 +_ 0.1
L
O 0.55 MIN
P 1.02+_ 0.2
Q
0.8+_ 0.2
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB1D0N60D KHB1D0N60I
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
30
V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
1.0
1.0*
0.57
0.57*
A
3.0
3.0*
50
mJ
2.8
mJ
5.5
V/ns
Drain Power
Dissipation
Ta=25
Derate above 25
PD
28
0.22
28
W
0.22 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
4.53
4.53
/W
Thermal Resistance, Case-to-Sink
RthCS
50
Thermal Resistance, Junction-to-
Ambient
RthJA
110
50
/W
110
/W
* : Drain current limited by maximum junction temperature.
DPAK
A
C
O
N
H
G
FF
123
I
J
D
B
K
M
E
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
6.6+_ 0.2
B
6.1+_ 0.2
C 5.34+_0.3
D
0.7+_ 0.2
E
9.3 +_0.3
F
2.3 +_0.2
G 0.76+_ 0.1
H 0.96 MAX
I
2.3+_ 0.1
J
0.5+_ 0.1
K
1.8+_ 0.2
L
0.5 +_ 0.1
M 1.02 +_ 0.3
N 1.0 +_ 0.1
O
1.5
IPAK-S
D
G
2005. 10. 24
Revision No : 1
S
1/6
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