2SC5707 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC5707

High Current Switching Applications

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SC5707

DESCRIPTION

·Large current capacitance

·High-speed switching

·100% avalanche tested

·Low collector-to-emitter saturation voltage

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·Complementary to 2SA2040

APPLICATIONS

·DC/DC converter,relay drivers,lamp drivers,motor

drivers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@ TC=25℃

Collector Power Dissipation

@Ta=25℃

TJ

Junction Temperature

11

A

15

W

1.0

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

Share Link: