SM8205A View Datasheet(PDF) - Anpec Electronics

Part Name

Description

Manufacturer

SM8205A

Dual N-Channel Enhancement Mode MOSFET / TSSOP- 8

Anpec Electronics 

SM8205A

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM*

IS*

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

300µs Pulsed Drain Current

Diode Continuous Forward Current

VGS=4.5V

TJ

TSTG

Maximum Junction Temperature

Storage Temperature Range

PD*

Maximum Power Dissipation

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

TA=25°C

TA=100°C

Rating

20

±10

6

20

1.7

150

-55 to 150

1.0

0.4

62.5

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics

(T

A

=

25°C

unless

otherwise

noted)

Symbol

Parameter

Test Condition

SM8205AO

Unit

Min. Typ. Max.

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA

20

IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V

TJ=85°C

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=250µA

0.5

IGSS Gate Leakage Current

VGS=±10V, VDS=0V

RDS(ON) a Drain-Source On-state Resistance

VSDa Diode Forward Voltage

VGS=4.5V, IDS=6A

VGS=2.5V, IDS=5.2A

ISD=1.7A, VGS=0V

Gate Charge Characteristics b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=10V, VGS=4.5V,

IDS=6A

V

1

µA

30

0.7 1.5 V

±100 nA

22 25

mΩ

28 40

0.7 1.3 V

10 13

3.6

nC

2

Copyright © ANPEC Electronics Corp.

2

Rev. A.1- Aug., 2007

www.anpec.com.tw

Free Datasheet http://www.datasheetlist.com/

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