2SC5622 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC5622

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SC5622

DESCRIPTION

·High Breakdown Voltage

·High Switching Speed

·Low Saturation Voltage

·Wide area of safe operation

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Character display horizontal deflection output

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCES

Collector-Emitter Voltage

1500

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current- Continuous

6

A

ICM

Collector Current- Continuous

12

A

IB

Base Current- Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

3

A

40

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

1

isc & iscsemi is registered trademark

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