D1500 View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

D1500

Silicon NPN Darlington Power Transistor

Unspecified 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD1500

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 10A; IB= 25mA

ICBO

Collector Cutoff Current

VCB= 150V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 8V; IC= 0

hFE

DC Current Gain

IC= 10A; VCE= 2V

VECF

C-E Diode Forward Voltage

IF= 10A

COB

Output Capacitance

fT

Current-Gain—Bandwidth Product

Switching times

IE= 0; VCB= 50V, ftest= 1MHz

IC= 1A; VCE= 5V

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IB1= -IB2= 25mA;

RL= 5Ω; VCC= 50V

MIN TYP. MAX UNIT

100

V

1.5

V

2.0

V

10 μA

16 mA

1000

3.0

V

75

pF

20

MHz

0.6

μs

3.0

μs

1.0

μs

isc Website：www.iscsemi.cn

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